This compendium is intended to provide a basic knowledge of power diodes and to give an insight in their operation. Power diodes are generally required to manage high voltages and/or high currents with negligible power losses. The different application areas also pose specific requirements about recovery dynamics, breakdown voltage, forward-bias drop, reverse-bias current and thermal impedance. Thus, device design is continuously evolving to make the most of the properties of the available materials and of the new manufacturing technologies. The main performance parameters are introduced and analyzed, aimed to provide insight in the criteria for selection of the proper devices for the different applications. The basic physics of power diodes also are outlined. The main diode structures are reviewed, with a particular evidence to the p-i-n junction diodes and to the SiC Schottky diodes. Finally, an overview is provided about the main properties of High-Band-Gap semiconductors, highlighting the rationale of their growing application in manufacturing of high-performance power diodes.
The power diode / Schirone, Luigi; Granello, Pierpaolo. - (2023), pp. 92-105. [10.1016/B978-0-12-821204-2.00161-6].
The power diode
Luigi , Schirone
;Pierpaolo, Granello
2023
Abstract
This compendium is intended to provide a basic knowledge of power diodes and to give an insight in their operation. Power diodes are generally required to manage high voltages and/or high currents with negligible power losses. The different application areas also pose specific requirements about recovery dynamics, breakdown voltage, forward-bias drop, reverse-bias current and thermal impedance. Thus, device design is continuously evolving to make the most of the properties of the available materials and of the new manufacturing technologies. The main performance parameters are introduced and analyzed, aimed to provide insight in the criteria for selection of the proper devices for the different applications. The basic physics of power diodes also are outlined. The main diode structures are reviewed, with a particular evidence to the p-i-n junction diodes and to the SiC Schottky diodes. Finally, an overview is provided about the main properties of High-Band-Gap semiconductors, highlighting the rationale of their growing application in manufacturing of high-performance power diodes.File | Dimensione | Formato | |
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